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Advance Technical Information
TrenchT2 TM
Power MOSFET
IXTH500N04T2
IXTT500N04T2
V DSS
I D25
R DS(on)
= 40V
= 500A
≤ 1.6m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
G
D
S
D (Tab)
V DSS
T J = 25 ° C to 175 ° C
40
V
V DGR
V GSM
I D25
I LRMS
I DM
I A
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
40
± 20
500
160
1250
100
V
V
A
A
A
A
TO-268 (IXTT)
G
S
D (Tab)
E AS
P D
T C = 25 ° C
T C = 25 ° C
800
1000
mJ
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
-55 ... +175
° C
T JM
175
° C
Features
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
-55 ... +175
300
260
1.13 / 10
6
4
° C
° C
° C
Nm/lb.in.
g
g
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Diode
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
40
V
Easy to Mount
Space Savings
High Power Density
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
V GS = 10V, I D = 100A, Notes 1 & 2
1.5
3.5 V
± 200 nA
10 μ A
750 μ A
1.6 m Ω
Applications
? Synchronous Buck Converters
? High Current Switching Power
Supplies
? Battery Powered Electric Motors
? Resonant-Mode Power Supplies
? Electronics Ballast Application
? Class D Audio Amplifiers
? 2009 IXYS CORPORATION, All Rights Reserved
DS100218(12/09)
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